Unveiling the nature of atomic defects in graphene on a metal surface

• Karl Rothe,
• Nicolas Néel and
• Jörg Kröger

Beilstein J. Nanotechnol. 2024, 15, 416–425, doi:10.3762/bjnano.15.37

• , during its epitaxial growth in surface science experiments or its fabrication for applications, defects, that is, deviations from the ideal 2D lattice, inevitably occur. Examples for defects are vacancies, interstitial atoms, grain boundaries, stacking faults or wrinkles [5][6][7][8][9][10][11][12][13

• of defects. Experimental A combined STM-AFM was operated in ultrahigh vacuum (5 × 10−9 Pa) and at low temperature (5 K). Surfaces of Ir(111) were cleaned by Ar+ ion bombardement and annealing. The epitaxial growth of graphene proceeded by exposing the heated (1300 K) Ir(111) surface to the gaseous

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• development is to use a different membrane, for example SiC (lattice constant a = 0.435 nm), since it can grow as a single-crystalline layer and ensure epitaxial sample growth on top of it, for example, the growth of NbN (a = 0.439 nm) with a lattice mismatch of 1%. Epitaxial growth of Py films on single

Spatial variations of conductivity of self-assembled monolayers of dodecanethiol on Au/mica and Au/Si substrates

• Julian Skolaut,
• Jędrzej Tepper,
• Federica Galli,
• Wulf Wulfhekel and
• Jan M. van Ruitenbeek

Beilstein J. Nanotechnol. 2023, 14, 1169–1177, doi:10.3762/bjnano.14.97

• S2a). In contrast to the Au/mica surface, the Au/Si substrate exhibits a rougher surface, as seen in Figure 2c, in agreement with the difference in growth mode of Au films on the two substrates. For mica, epitaxial growth is obtained [16][17], while Au on Si/SiO2 forms a granular film [18]. Although

Formation of nanoflowers: Au and Ni silicide cores surrounded by SiO_x branches

• Feitao Li,
• Siyao Wan,
• Dong Wang and
• Peter Schaaf

Beilstein J. Nanotechnol. 2023, 14, 133–140, doi:10.3762/bjnano.14.14

• and lines presenting epitaxial growth. The non-uniform distribution of SiO gas concentration around the decomposition cavities leads to the different growth rates of SiOx branches in the nanoflowers based on their distance to the border of the cavities. The closer to the border, the higher the SiO

Recent advances in nanoarchitectures of monocrystalline coordination polymers through confined assembly

• Lingling Xia,
• Qinyue Wang and
• Ming Hu

Beilstein J. Nanotechnol. 2022, 13, 763–777, doi:10.3762/bjnano.13.67

• polymer matches with the surface of the substrate, triggering isotropic or preferential growth of the monocrystalline coordination polymers [121]. Epitaxial growth is significant for future application of the coordination polymers, particularly for electronic applications [122]. The key prerequisite is to

• find appropriate substrates with lattice similarity to the preferred crystallographic orientation of the targeted coordination polymer. Parallelly aligned Cu(OH)2 nanobelts were used to guide the epitaxial growth of Cu2(BDC)2 (BDC = benzenedicarboxylic acid). Centimeter-scale micropore alignment was

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• ) [3][4][5][6][7], epitaxial growth on different substrates [8][9], and the chemical reduction of graphene oxide (GO) [10][11]. In 2008, production of graphene by liquid-phase exfoliation (LPE) of graphite through sonication of graphite powder in N-methylpyrrolidone (NMP) was first proposed by Coleman

Controllable two- and three-state magnetization switching in single-layer epitaxial Pd_1−xFe_x films and an epitaxial Pd_0.92Fe_0.08/Ag/Pd_0.96Fe_0.04 heterostructure

• Igor V. Yanilkin,
• Amir I. Gumarov,
• Gulnaz F. Gizzatullina,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2022, 13, 334–343, doi:10.3762/bjnano.13.28

• PdFe1 and PdFe2 layers. It is achieved by introducing the non-magnetic spacer layer N of silver satisfying the epitaxial growth conditions. The different coercive fields were obtained choosing the Pd0.92Fe0.08 and Pd0.96Fe0.04 compositions for the ferromagnetic PdFe1 and PdFe2 layers [18]. Figure 6

Chemical vapor deposition of germanium-rich CrGe_x nanowires

• Vladislav Dřínek,
• Stanislav Tiagulskyi,
• Roman Yatskiv,
• Jan Grym,
• Radek Fajgar,
• Věra Jandová,
• Martin Koštejn and
• Jaroslav Kupčík

Beilstein J. Nanotechnol. 2021, 12, 1365–1371, doi:10.3762/bjnano.12.100

• prepared, too. Magnetic properties were measured and the growth mechanism was discussed [10]. The formation of Cr/Ge nanoparticles during the epitaxial growth of Cr/Ge films and their magnetic properties were studied to understand the ferromagnetic semiconductor behavior [11]. In this work, we made an

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

• Alina V. Dvornichenko,
• Vasyl O. Kharchenko and
• Dmitrii O. Kharchenko

Beilstein J. Nanotechnol. 2021, 12, 694–703, doi:10.3762/bjnano.12.55

• observed on silicon substrates [12][13]. Strong effects of EM were manifested in the processes of evolution of vanadium surface morphology [14], and in the epitaxial growth of semiconductor heterostructures [15]. It was found that at low deposition temperatures the growth of surface structures occurs

Spontaneous shape transition of Mn_xGe_1−x islands to long nanowires

• S. Javad Rezvani,
• Luc Favre,
• Gabriele Giuli,
• Yiming Wubulikasimu,
• Isabelle Berbezier,
• Augusto Marcelli,
• Luca Boarino and
• Nicola Pinto

Beilstein J. Nanotechnol. 2021, 12, 366–374, doi:10.3762/bjnano.12.30

• formation of quantum wires [35]. In this method, wires are obtained via epitaxial growth of a strained wetting layer followed by annealing at high temperature. However, only few studies have been dedicated to strain-induced elongation mechanisms leading to the formation of semiconducting nanowires, such as

• and XRD investigations are in agreement with previous studies that have proved the formation of Mn-rich GeMn phases (e.g., islands) during the co-epitaxial growth of Mn and Ge by MBE on Ge substrates [19][20][21][22][23][24][27][37]. Even at low substrate temperatures and low Mn contents in the GexMn1

The patterning toolbox FIB-o-mat: Exploiting the full potential of focused helium ions for nanofabrication

• Victor Deinhart,
• Lisa-Marie Kern,
• Jan N. Kirchhof,
• Sabrina Juergensen,
• Joris Sturm,
• Enno Krauss,
• Thorsten Feichtner,
• Sviatoslav Kovalchuk,
• Michael Schneider,
• Dieter Engel,
• Bastian Pfau,
• Bert Hecht,
• Kirill I. Bolotin,
• Stephanie Reich and
• Katja Höflich

Beilstein J. Nanotechnol. 2021, 12, 304–318, doi:10.3762/bjnano.12.25

• including, but not limited to, the direct writing of defects to act as nuclei for epitaxial growth [25], the fabrication of two-dimensional phononic crystals [26], the magnetic patterning of suspended Co/Pt multilayers, the fabrication of two-dimensional mechanical resonators based on single-layer graphene

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

• Jianqi Dong,
• Liang Chen,
• Yuqing Yang and
• Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

• introduced during the epitaxial growth process [1][2][3]. Furthermore, the analysis of the internal polarization of the AlGaN/AlN/GaN heterojunction showed the existence of a 2D electron gas (2DEG), which effectively suppresses the degradation of the carrier mobility caused by the scattering at charge

Proximity effect in [Nb(1.5 nm)/Fe(x)]₁₀/Nb(50 nm) superconductor/ferromagnet heterostructures

• Yury Khaydukov,
• Sabine Pütter,
• Laura Guasco,
• Roman Morari,
• Gideok Kim,
• Thomas Keller,
• Anatolie Sidorenko and
• Bernhard Keimer

Beilstein J. Nanotechnol. 2020, 11, 1254–1263, doi:10.3762/bjnano.11.109

• energy was directed along the azimuth of the sapphire substrate. In order to check the crystal structure and the quality of the epitaxial growth, X-ray diffraction measurements were performed using a θ–2θ diffractometer. The diffractometer operates at the wavelength of λ = 1.54 Å and is equipped with a

•  2a) reveals a crystalline structure with Laue rings and Kikuchi lines indicating a smooth and ordered surface. Nb deposition at 800 °C results in a streaky pattern and a Laue ring (Figure 2c) revealing epitaxial growth in agreement with previous results [43][44][45][46]. In particular, the epitaxial

Revealing the local crystallinity of single silicon core–shell nanowires using tip-enhanced Raman spectroscopy

• Marius van den Berg,
• Ardeshir Moeinian,
• Arne Kobald,
• Yu-Ting Chen,
• Anke Horneber,
• Steffen Strehle,
• Alfred J. Meixner and
• Dai Zhang

Beilstein J. Nanotechnol. 2020, 11, 1147–1156, doi:10.3762/bjnano.11.99

• -doped silicon nanowires (SiNWs). A rational strategy to obtain radial homo- and heterojunctions is to overcoat the as-grown nanowires within the same reaction chamber by implementing a conventional CVD process (e.g., thermal SiH4-CVD) yielding core–shell nanowires [14]. Although ideal epitaxial growth

Epitaxial growth and superconducting properties of thin-film PdFe/VN and VN/PdFe bilayers on MgO(001) substrates

• Wael M. Mohammed,
• Igor V. Yanilkin,
• Amir I. Gumarov,
• Airat G. Kiiamov,
• Roman V. Yusupov and
• Lenar R. Tagirov

Beilstein J. Nanotechnol. 2020, 11, 807–813, doi:10.3762/bjnano.11.65

• structure. We propose epitaxial single-crystalline thin films of VN and heteroepitaxial Pd1−xFex/VN and VN/Pd1−xFex (x ≤ 0.08) structures grown on MgO(001) as the materials of a choice for the improvement of superconducting magnetic random access memory characteristics. Keywords: epitaxial growth

• VN/Pd0.92Fe0.08 (the first component in a stack being directly deposited to MgO) have been obtained with the identical properties of the VN layer in each sample. Crystallinity and epitaxial growth The crystallinity and the epitaxial growth of the thin films were examined in situ by using LEED (SPECS

Observation of unexpected uniaxial magnetic anisotropy in La_2/3Sr_1/3MnO₃ films by a BaTiO₃ overlayer in an artificial multiferroic bilayer

• John E. Ordóñez,
• Lorena Marín,
• Luis A. Rodríguez,
• Pedro A. Algarabel,
• José A. Pardo,
• Roger Guzmán,
• Luis Morellón,
• César Magén,
• Etienne Snoeck,
• María E. Gómez and
• Manuel R. Ibarra

Beilstein J. Nanotechnol. 2020, 11, 651–661, doi:10.3762/bjnano.11.51

• substrates, while the position of Qz is quite different from that of each substrate, being almost superimposed for LSMO grown on LSAT (see Figure 1b). This behavior corroborates the expected fully strained epitaxial growth (cube-on-cube) of the LSMO film where its in-plane lattice parameter is adapted to

• of the tensile-strained film can be locally altered with the formation of an orthorhombic structure due to different rotation patterns of the MnO6 octahedra to favor epitaxial growth [44][45]. In most of the cases, this is promoted by the substrate surface morphology (e.g., regular step-terrace

• strain maps reflect homogeneous and dislocation-free STO and LSMO layers, and a BTO layer with several linear defects, most of which are concentrated close to the BTO/LSMO interfaces. Misfit dislocation-free epitaxial growth of LSMO films under (001)-oriented STO substrates is expected and widely

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• the optimization of epitaxial growth to achieve the lowest possible dislocation density. Most often, GaN is produced in the LED industry by metal organic chemical vapour deposition (MOCVD) in a heteroepitaxial process on sapphire substrates [4]. The lattice parameter mismatch of ca. 13.8% between GaN

• . These either cause device failure immediately or reduce product lifetime. With that in mind, a precise analysis of etch behaviour is sought after, along with the knowledge of how the etch rate is influenced by different conditions during epitaxial growth. In this report, we describe two major approaches

Self-assembly of a terbium(III) 1D coordination polymer on mica

• Quentin Evrard,
• Giuseppe Cucinotta,
• Felix Houard,
• Guillaume Calvez,
• Yan Suffren,
• Carole Daiguebonne,
• Olivier Guillou,
• Andrea Caneschi,
• Matteo Mannini and
• Kevin Bernot

Beilstein J. Nanotechnol. 2019, 10, 2440–2448, doi:10.3762/bjnano.10.234

• candidate for the creation of surface-based magnetic and luminescent devices. In the present work, we report the epitaxial growth of needle-like objects composed of [Tb(hfac)3·2H2O]n (where hfac = hexafluoroacetylacetonate) polymeric units on muscovite mica, which is observed by atomic force microscopy. The

Size-selected Fe₃O₄–Au hybrid nanoparticles for improved magnetism-based theranostics

• Maria V. Efremova,
• Yulia A. Nalench,
• Eirini Myrovali,
• Anastasiia S. Garanina,
• Ivan S. Grebennikov,
• Polina K. Gifer,
• Maxim A. Abakumov,
• Marina Spasova,
• Makis Angelakeris,
• Alexander G. Savchenko,
• Michael Farle,
• Natalia L. Klyachko,
• Alexander G. Majouga and
• Ulf Wiedwald

Beilstein J. Nanotechnol. 2018, 9, 2684–2699, doi:10.3762/bjnano.9.251

• (Figure 3A and 3B) and fast Fourier transform (FFT) (Figure 3C and 3D). It is clear that the Au NPs, acting as seeds in the synthesis, allow for epitaxial growth of Fe3O4 on Au, forming the Janus structure with Au (111) || Fe3O4 (111) and Au (200) || Fe3O4 (200), which is in agreement with the previous

Silicene, germanene and other group IV 2D materials

• Patrick Vogt

Beilstein J. Nanotechnol. 2018, 9, 2665–2667, doi:10.3762/bjnano.9.248

• layered parent crystals from which single layers can be exfoliated. From this it follows that these materials have to be synthesized either chemically or by epitaxial growth on a supporting substrate. Thus, it should be considered that the substrate could influence the structural and electronic properties

ZnO-nanostructure-based electrochemical sensor: Effect of nanostructure morphology on the sensing of heavy metal ions

• Marina Krasovska,
• Vjaceslavs Gerbreders,
• Irena Mihailova,
• Andrejs Ogurcovs,
• Eriks Sledevskis,
• Andrejs Gerbreders and
• Pavels Sarajevs

Beilstein J. Nanotechnol. 2018, 9, 2421–2431, doi:10.3762/bjnano.9.227

• with a ZnO seed layer in order to provide adhesion of the nanostructured ZnO film to the glass surface, as well as epitaxial growth and the vertical alignment of nanostructures. It was prepared by dip coating using 5 mM zinc acetate (Zn(O2CCH3)2) solution in ethanol. The seed layer film was dried in a

Proximity effect in a two-dimensional electron gas coupled to a thin superconducting layer

• Christopher Reeg,
• Daniel Loss and
• Jelena Klinovaja

Beilstein J. Nanotechnol. 2018, 9, 1263–1271, doi:10.3762/bjnano.9.118

• advances of the past few years was the successful epitaxial growth of thin layers of superconducting Al on InAs and InSb nanowires [38][39][40][41][42]. The intimate contact between the semiconductor and superconductor in these devices ensures a hard induced superconducting gap. Recently, this epitaxial

• growth technique has been applied also to InAs two-dimensional electron gases (2DEGs) [43][44][45][46][47]. The proximity effect has been theoretically studied recently in both strictly one-dimensional (1D) [48] and quasi-1D [49] wires coupled to thin superconducting layers. In both instances, a strong

An implementation of spin–orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi

• Sahar Pakdel,
• Mahdi Pourfath and
• J. J. Palacios

Beilstein J. Nanotechnol. 2018, 9, 1015–1023, doi:10.3762/bjnano.9.94

• those expectations closer to reality [33]. It was demonstrated that it is possible to isolate few or even single stable layers of antimonene, in ambient conditions. Moreover, new procedures such as liquid exfoliation and epitaxial growth methods were reported. Theoretical works on antimonene can be

Kinetics of solvent supported tubule formation of Lotus (Nelumbo nucifera) wax on highly oriented pyrolytic graphite (HOPG) investigated by atomic force microscopy

• Sujit Kumar Dora,
• Kerstin Koch,
• Wilhelm Barthlott and
• Klaus Wandelt

Beilstein J. Nanotechnol. 2018, 9, 468–481, doi:10.3762/bjnano.9.45

• studying the epitaxial growth of organic molecules with aliphatic chains on HOPG which occurs due to the perfectly-matched interatomic distances in the molecules and the HOPG substrate. Watel and coworkers have demonstrated for long chain alkanes a parallel orientation of the carbon skeleton with respect

• to HOPG surface [29]. Further, epitaxial growth of paraffin waxes on organic crystals also resulted in a parallel orientation of these waxes on organic crystals [30][31]. Additionally, the presence of free standing dangling bonds at the step edges of an HOPG substrate surface [32][33] could also

• influence the tubule orientation. The term epitaxial growth is however restricted to first few grown layers of crystal on the substrates. On the other hand, the tubules observed in our experiments were formed on an instantaneously solidified thin wax film (containing both tubule and non-tubule forming waxes

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• properties of intermediate-to-high Mg doping levels are scarce in the literature, with more relevance placed on the optical properties. The envisaged applications of GaAs nanowires depend on the use of substrates with different compositions and orientations. The epitaxial growth of GaAs on Si substrates is